Silicon Incubator's infrastructure provides startup companies with experienced personnel and tools for discrete and integrated circuits, IC mask design, semiconductor process development and wafers fabrication of prototype and production.
Silicon Incubator offers a shared facility business model. Silicon Incubator terms are extremely flexible.

Tier 1 for early startups with up to 2 engineers working in the wafer fab.

Who is this program for?
-Any VC, Angel, Government or privately funded startup company that needs to develop a new product that requires a new custom technology not available from any other wafer foundry.
For how long?
-Minimum license programs are 24 months.
What is the monthly license fee?
-Monthly license fee is $35k.
What is included in monthly license fee?
-Monthly license fee includes:
-access 24/7 to the office and wafer fab of one of customer's engineers or technical managers.
-40h/week access to the wafer fabrication facility of one of customer's process engineers or technicians working in the fab and usage of all installed wafer fab equipment.
Silicon Incubator provides on site full time services (40h/week) of the wafer fab manager in charge of facilities and equipment maintenance.
What is NOT included in monthly license fee?
-Cost of payroll and workers comp insurance for customer's own personnel accessing the incubator's facility.
-Cost of materials, instruments and equipment specific to customer's application, including startup wafers, chemicals, gases, custom tools, etc.
-Cost of shared utilities

Tier 2 FULL SERVICE for startups already in pilot or preproduction phase

Tier 2 license fee of $75K/ month includes everything as Tier 1 PLUS wafer fab full service support. -Minimum duration of Tier 2 license programs is 5 years. Full service support includes 40h/week of services of a Diffusion and LPCVD Technician, a Thin Film Deposition Technician, a Photolithography Technician, an Ion Implant Technician, a Plasma Etch Technician and a Stepper Technician. In addition certain chemicals, gases, Liquid Nitrogen, Photoresist and ancillaries in amount of $5k/month are included.

Tier 1 and Tier 2 programs detailed above are only examples and all terms and conditions are deemed to be revised on case by case basis.

For more information please contact Silicon Incubator by email: 

Silicon Incubator is Silicon Valley's only incubator that owns a wafer fabrication facility and is focused on development of new semiconductor products and technologies. Silicon Incubator clients are startup companies that need an environment other than office space or universities laboratories where to build a hands on experienced team while developing products and technologies that are not readily available from TSMC, TI, ON Semi, Soitec, Bosch, Cirrus Logic, Arm, ST Micro etc.  
Silicon Incubator Wafer Foundry, offers semiconductor technologies development and manufacturing support for Gallium Nitride - GaN, Silicon Carbide - SiC, SiGe, Gallium Oxide - Ga2O3 , MEMS, POWER MOSFET, IGBT, SBD, Silicon Bipolar, BiCMOS, BCD etc.
Silicon Incubator's wafer fabrication facility is located in Silicon Valley and helps startup companies to design and manufacture standard and custom semiconductor and thin film components for bio-medical, wireless telecommunications, optoelectronics, computing, industrial, military and space and satellite applications.


Last update: September 12, 2021 Display settings for best viewing: Current display settings:
Screen resolution: 1024x768 Screen resolution:
Color quality: 16 bit Color quality: bit

© 1990, SILICON VALLEY INCUBATOR. All rights reserved. No material from this site may be used or reproduced without permission.

Glossary of terms
Following glossary of terms is a list of all topics that are presented in this web site. Visitor can search this web site simply by looking up a topic from the glossary of terms. Each term is linked to a primary web page that best describes respective topic. For in depth search of a topic, both on this web site or on the world wide web visitors are advised to use the search command.
  • Active base
  • Adhesion, adhesion promoter
  • Ag, see silver
  • Air annealing, air firing
  • Al, aluminum, aluminum deposition, aluminum etch, aluminum film, aluminum metallization, aluminum sputtering
  • AlN, Aluminum nitride metallized substrate
  • Al2O3, aluminum oxide, alumina
  • Alloying
  • Ammonium fluoride etching solution
  • Amorphous silicon, a:Si
  • Anisotropic etching
  • Annealing, nitrogen, air
  • Anodization solution
  • As, Arsenic implant, arsenic diffusion, arsenic doped silicon
  • Antimony, Antimony diffusion, Antimony implant, Sb implant, antimony doped silicon
  • Ar, argon sputter clean, sputter etch
  • Ashing
  • Au, Au-Ge, Au-In, Au-Si, Au-Sn
  • Avalanche Breakdown
  • Backlap and polish, backlapping
  • Barrel etch reactor, LFE
  • Base contact, base diffusion, base junction, base implant, base mask, base oxide, base resistance
  • Beam leads
  • Be, Beryllium, BeO, Beryllium Oxide
  • Bevel and stain epitaxial layer thickness measurement
  • BHF, buffered hydrofluoric etching, BOE, buffered oxide etch
  • Bipolar transistor, bipolar process, bipolar foundry, bipolar wafer, bipolar device, bipolar integrated circuit
  • Bird beak and bird crest
  • BJT, bipolar junction isolated transistors
  • Bonding pad, Bond pad
  • B, Boron implant, Boron doped oxide, Boron doped silicon
  • Bipolar process
  • Bipolar transistor, bipolar transistor doping profile, bipolar wafer foundry
  • Breakdown voltage, BVcbo, BVceo, BVebo, BVsd, BVgd
  • Bump, gold bump process, under bump metallization
  • Buried layer, buried collector
  • Capacitance, junction capacitance, parasitic capacitance
  • Carrier concentration
  • Capacitors, MOS, MNOS, MIS, MIM
  • CF4 plasma etch
  • Channel stop, ion implanted channel stopper, channel implant
  • Chemical etchants, chemical etch of metals, chemical etch of silicon, chemical etch of oxide
  • Chip, chip capacitor, chip inductor, chip resistor
  • Cleaning, diffusion cleaning, tube cleaning
  • Cl, Chlorine oxidation, plasma etch
  • Contract fabrication
  • Cr, Chromium sputter deposition, etch, masks
  • Certificate of conformance
  • Class 10 clean room, Class 10 laminar flow hood
  • CMOS, complimentary metal oxide semiconductor
  • Collector contact, collector diffusion, collector junction, collector implant, collector mask, collector oxide, collector resistance
  • Complimentary bipolar process, transistors
  • Complimentary bipolar process, Complimentary bipolar foundry, Complimentary bipolar wafer, Complimentary bipolar integrated circuit
  • Contacts to silicon, silicide, resistor film, contact etch, contact printing, contact resistance
  • Cu, copper film, copper deposition, copper electroplating, copper etch, copper sputtering, copper metallization
  • Copper displacement plating solution
  • CP-4, CP-6, CP-8 etchants, composition, etch rates
  • C-V measurement
  • CZ silicon, Czochralski grown silicon
  • DC Magnetron sputtering
  • Dehydration, Dehydration oven, dehydration treatment
  • Depletion mode transistors, depletion layer width
  • Deposition, deposition services
  • Deposited films, deposited metals, deposited nitride, deposited oxides, deposited silicon
  • Deposition rate, sputtering, PECVD, LPCVD, electroplating
  • Design
  • Device design, device manufacturing, device processing, device reliability
  • DI water, deionized water
  • Dielectrics, dielectric films, dielectric constant of materials
  • Diamond like film deposition
  • Dicing saw, wafers, ceramic, quartz
  • Die bonding, die attach, die attach eutectic
  • Dielectric constant of various common ceramic materials
  • Dielectric depositions, reactive sputtered dielectric deposition, PECVD dielectric deposition, spin on glass
  • Die
  • Dicing, see sawing
  • Diffused capacitors, diffused diodes, diffused junctions, diffused resistors
  • Diffusion, diffusion cleaning, diffusion layer, ion implanted source, lateral diffusion, open tube, diffusion doping profile
  • Diffusion furnace operating conditions, ramping rates, diffusion and oxidation
  • Diffusion tube, diffusion tube cleaning, diffusion cleaning, diffusion preclean
  • Diodes, diffused diodes, junction diodes, photo diodes, schottky diodes, zener diodes doping profile
  • Discrete semiconductor components
  • DMOS
  • Doped Oxide, Doped polysilicon, silicon
  • Doping, vapor phase doping, in situ doping, ion implant doping
  • Doping profile of bipolar transistors, doping profile of diffused junctions
  • Dry oxidation of silicon, dry oxide
  • Electromigration
  • Electron mobility
  • Electroplating, electroplating solution
  • Ellipsometer
  • Emitter ballasted transistor
  • Emitter diffusion, emitter push effect, emitter implant, emitter mask, emitter oxide, emitter resistance, emitter washout process
  • Enhancement mode transistors
  • Epi deposition, Epitaxy, epitaxial devices, epitaxial deposition, epitaxial layers, epitaxial layer thickness measurement
  • epitaxial layer pattern shift and pattern distortion
  • Erfc diffusion, erfc profile
  • Etch, Etching, anisotropic, isotropic etching, etch profile
  • Etchants for oxide, nitride, metals
  • Etch rates for plasma etch, etch rates for wet etch, etch rate for sputter etch process
  • Eutectic, eutectic die attaching
  • Fe2O3, see iron oxide
  • Field effect transistor
  • Field implant, field oxide
  • Film, films, film deposition, film deposition conditions, sputtering, LPCVD, PECVD
  • Film properties of oxides, film properties of nitride
  • Fixed oxide charge
  • Float zone silicon
  • Fluorine gas plasma etch of Si, SiO2, Si3N4, metals
  • Four point probe measurement, 4pp instrument, 4pp measurements
  • Four-point probe method
  • Fundamental constants
  • Furnace operating conditions, ramping rates and insertion rates
  • FZ, float zone silicon
  • Gain bandwidth product
  • Ga, Gallium, Gallium arsenide, GaAs, GaAs processing
  • Gas, Gases, gas plasma etch, gas supply, gas distribution, gas phase deposition
  • Gaussian diffusion profile
  • Gate, Gates, see MOS gates, Schottky gates
  • Germanium, Ge
  • Gettering, gettering of heavy metals via Chlorine oxidation
  • Glass substrates, glass deposition
  • Gold deposition, gold doping, gold films, gold etch, gold electroplating, gold diffusion, gold sputtering, gold alloying
  • Gold bump process
  • Grain boundary, Polysilicon grain boundary
  • Guard ring diffusion, guard ring implant, guard ring layout design
  • Hall effect, hall mobility, hall sensors
  • Halogen, halogen plasma etch, halogenic oxidation
  • Heavy doping
  • Hexamethyldisilizane, see HMDS
  • Heteroepitaxy
  • High resistivity silicon, FZ, float zone silicon
  • High resistivity water
  • High temperature annealing
  • Hillocks
  • Hole mobility
  • Horizontal reactor
  • Hot wall reactor
  • Hydrogen, Hydrogen anneal, Hydrogen diffusion, hydrogen flow
  • HCl, hydrogen chloride etch, hydrogen chloride oxidation
  • HF, hydrogen fluoride etching solution
  • NH4F ammonium fluoride etching solution
  • Hydrophobic surface
  • HMDS, HMDS spin coating, HMDS adhesion promoter
  • Hyperabrupt junction diodes, Hyperabrupt profile, Hyperabrupt Schottky diodes
  • Image reversal photoresist
  • Implant, Implanted resistors
  • Impurity concentration, impurity diffusion, impurity gradient, impurity profile, impurity redistribution
  • Index of refraction
  • In-situ etching, in-situ doping, in-situ cleaning
  • Integrated circuit process sequence
  • Interconnections, single metal interconnections, double metal interconnections
  • Interstitial
  • Intrinsic carrier concentration, intrinsic gettering
  • Iodine, Iodine etch, KI solution
  • Ion dose, Ion implant, ion implantation, ion implant activation, ion implant doping profile, implant dose, ion implantation
  • Ion implanted JFET
  • Ion implanted buried layer, Ion implanted collector, ion implanted base, ion implanted emitter
  • Ion implanted source, Ion implanted Drain
  • Ion implanted resistor
  • IPA, IPA dry, Isopropyl alcohol
  • Iron
  • Iron oxide film, iron oxide deposition, iron oxide masks
  • ISO 9000 compliance, ISO 9000 compliant
  • Isolation, isolation diffusion, isolation mask
  • JFET, J-FET diffused
  • Junction curvature, junction delineation, junction diffusion, junction depth, junction formation, junction isolation, junction lag, junction staining
  • Junction diode, junction field effect transistor
  • K, see potassium
  • KOH, KOH etch, KOH anisotropic etch, KOH silicon etch
  • KTFR, see negative resist, negative photoresist
  • Laminar flow, laminar flow hood
  • Laser, Laser annealing, laser drilling, laser cutting, laser machining, laser trim of thin film resistors
  • Lateral diffusion, lateral spread
  • Lateral p-n-p transistor, lateral PNP transistors
  • Lifetime
  • Lift-off process
  • Linear oxidation rate constant
  • LiNbO3 process
  • Layout design
  • Loading effect
  • Local oxidation, LOCOS, Locally oxidized transistor
  • Low reverse gain transistors
  • LPCVD epitaxial deposition, LPCVD epitaxial process
  • LPCVD nitride deposition, LPCVD nitride process
  • LPCVD oxide deposition, LPCVD oxide process
  • LPCVD Polysilicon deposition, LPCVD Polysilicon process
  • Low pressure chemical vapor deposition
  • Low pressure reactor
  • Magnetron
  • Mask, mask design, mask manufacturing, manufacturing borosilicate mask, chrome mask, low reflectivity chrome mask, e-beam mask, emulsion mask, iron oxide mask, see through mask, silicon mask, soda lime glass mask, master mask, reticule, working mask
  • Mask alignment, mask alignment keys
  • Masking
  • Mass flow controller
  • Measurement, 4pp measurement, sheet resistance measurement, thickness measurement, refractive index measurement
  • Measurement of resistivity
  • MEMS, MEMS contract fabrication, MEMS process development, MEMS wafer foundry
  • Mesa etch, mesa isolation
  • Metallization and Lift-off, multi-layer metallization, single-layer metallization, multi-level metallization, single-level metallization
  • Metal, Metals deposition, metal films, metal etch, metal mask, metal patterning
  • Metal oxides, metal nitrides, metal silicide
  • Metalorganic
  • Metals refractory
  • Metal Oxide Semiconductor, MOS, MOS transistor, MOSFET
  • Metal semiconductor junction, Schottky barrier diode
  • Military standard, MIL 883
  • MNOS transistors
  • Mobility
  • Molecular beam Epitaxy
  • Mo, Molybdenum, Molybdenum deposition, molybdenum sputtering, molybdenum film, molybdenum etch, molybdenum gate, molybdenum metallization, molybdenum interconnection layer
  • MOS capacitor, MOS devices, MOS transistor
  • Multi-emitter transistor, multiple diodes, multiple implants
  • Narrow slot, diffusion
  • N-channel transistor
  • Nitrogen annealing, nitrogen flow
  • NMOS
  • Non volatile memory
  • NPN transistor
  • n+ - p - n+ transistor
  • Ohmic contact, ohmic contacts to silicon, ohmic contacts to silicide
  • Optical mask, optical printing, optical printer
  • Optoelectronic application, optoelectronic devices
  • Organometalic
  • Orientation of silicon, orientation effects
  • Over etch
  • Oxidation, oxidation rate, Oxidation-induced stacking faults, oxidation tube, oxidation furnace
  • Oxide deposition, oxide etch, oxide isolation, oxide isolated
  • Oxide color chart, oxide masking properties, oxide growth rate, oxide isolation
  • Oxygen, oxygen plasma, oxygen flow
  • Pad oxide and silicon nitride deposition, bird beak and bird crest
  • Palladium, Palladium deposition, Palladium sputtering, Palladium film, Palladium etch, Palladium metallization, Palladium silicide
  • Parabolic oxidation rate constant
  • Parasitic capacitance, parasitic junction
  • Partial pressure
  • Paper less
  • Passive components
  • Pattern, pattern delineation, pattern generation, pattern shift, pattern distortion
  • P-channel JFET, p-channel transistor
  • Pd, Palladium, Palladium deposition, Palladium sputtering, Palladium film, Palladium etch, Palladium metallization, Palladium silicide
  • PECVD see plasma enhanced chemical vapor deposition, PECVD Nitride deposition, PECVD Oxide deposition, PECVD amorphous silicon deposition
  • Penetration depth, ion implant depth
  • Peritectic reaction
  • Permalloy
  • Permeability
  • Phosphoric acid etch of silicon nitride, Phosphoric acid and aluminum etch, H3PO4
  • Phosphorus, Phosphorus diffusion, Phosphorus ion implant, Phosphorus doped silicon,Phosphorus doped glass
  • Phosphosilicate glass
  • Photolithography
  • Photoresist, photoresist coating, photoresist masking, negative photoresist, positive photoresist, photoresist removal, photoresist strip, photoresist ashing, photoresist develop, photoresist expose, photoresist soft bake, photoresist hard bake, photoresist adhesion, photoresist UV flood exposure, photoresist image reversal
  • Pinch off voltage
  • Pinch resistor
  • Planar process, planar technology, planar junction, planar reactor, planar plasma etch reactor, planarization
  • Plasma, plasma anodization, plasma ashing, plasma assisted etching, plasma etch, plasma etching, plasma clean, plasma reactor
  • Plasma Enhanced chemical vapor deposition, see PECVD, Nitride deposition, PECVD Oxide deposition, PECVD amorphous silicon deposition
  • Plating, plated gold, plated copper, plated silver, plating solution
  • Platinum, see Pt, Platinum deposition, Platinum sputtering, Platinum film, Platinum etch, Platinum metallization, Platinum silicide
  • pn junction
  • PNP transistor
  • Polycrystalline silicon
  • Polishing, Polishing etch, polished wafers, polished ceramic, polished silicon, polished quartz wafers, polished glass wafers
  • Polyamide
  • Polysilicon emitter, Polysilicon deposition, Polysilicon sputter deposition, Polysilicon oxidation, Polysilicon doping, Polysilicon etching, Polysilicon anisotropic plasma etching, LPCVD undoped polysilicon deposition, Polysilicon gate, Polysilicon growth
  • Positive resist, positive photoresist
  • Printing, contact printing, optical printing, projection printing, proximity printing, printing defects
  • Process control, process development, process flow, process run sheet, process run traveler, process work sheet
  • Projected range and ion implantation
  • Projection printing
  • Proximity printing
  • PSG, see Phosphorus doped glass
  • Pt, see Platinum, Platinum deposition, Platinum sputtering, Platinum film, Platinum etch, Platinum metallization, Platinum silicide
  • Purple plague and gold aluminum intermetallics
  • Pyrogenic oxidation process, Pyrogenic oxide
  • Quality, Quality audit, Quality manual, Quality system
  • Quartz, Quartz boat, Quartz deposition, quartz mask, Quartz polishing, Quartz tube, Quartz substrate, Quartz wafer
  • R&D, R&D contract, R&D facility, R&D support, R&D SILICON VALLEY INCUBATOR, R&D wafer foundry
  • Radial resistivity
  • Ramping rate
  • Reactive ion etching, see RIE
  • Reactive sputtering
  • Reactor, barrel reactor, low pressure reactor, planar reactor, tunnel reactor
  • Refractive index measurement
  • Refractory metals
  • Reflow method, reflow of doped oxide, reflow of photoresist
  • Registration between mask layers
  • Reliability, reliable metallization, reliable process
  • Research and development contract, Research and development facility, Research and development support, Research and development SILICON VALLEY INCUBATOR, Research and development wafer foundry
  • Residual film stress
  • Resist, see photoresist
  • Resistance
  • Resistor, resistors, diffused resistors, implanted resistors, thin film resistors, pinch resistors, resistor trim
  • Resistivity, resistivity measurement, resistivity versus temperature, see TCR
  • Reticule, reticule mask, see also mask stepper
  • RF magnetron, RF plasma etch
  • RIE, see reactive ion etching also
  • Rsq, sheet resistance measurement
  • Run sheet
  • Run traveler
  • Sapphire, Sapphire substrate, Sapphire polishing, Sapphire dicing
  • Saw, sawing, sawing process, sawing service
  • Scribe line, scribing
  • Sealed junction technology
  • Selective Epitaxy, selective etching
  • Se, Selenium
  • Self aligned gate process, self alignment, self aligning method
  • Self isolated transistor, self isolation
  • Semiconductor, semiconductor components, semiconductor equipment, semiconductor processing, semiconductor services
  • Semi-insulating
  • Shallow diffusion, shallow junction, shallow implant, shallow impurities
  • Silane, SiH4
  • SiC, silicon carbide, silicon carbide deposition
  • SiCr, sichrome films, sichrome deposition
  • SiN, Si3N4
  • Silica glass, silica etch, see oxide etch
  • Silicon components
  • Silicon integrated circuits
  • SiO2, SiO, SiOxNy, SIPOS
  • Silicide etch, silicide growth, silicide oxidation, silicide properties
  • Silicide, Ti, Ta, Pt, Mo
  • Silicon dioxide, Silicon dioxide etch, Silicon dioxide plasma etch, Silicon dioxide deposition
  • Silicon nitride, silicon nitride deposition, silicon nitride etch rate, silicon nitride film properties, silicon nitride refractive index
  • Silicon anisotropic etches, see KOH etch and plasma anisotropic etch of silicon and polysilicon
  • Silicon annealing, silicon anodization, silicon cleaning, silicon cleaving, silicon crystallographic etches, silicon etch rates
  • Silicon polishing etches
  • Silicon denuded zone formation
  • Silicon dioxide, SiO2, Silicon dioxide etch, Silicon dioxide film, Silicon dioxide growth, Silicon dioxide deposition
  • Silicon dioxide reactive sputter deposition, Silicon dioxide PECVD deposition, Silicon dioxide LPCVD deposition
  • Silicon dioxide refractive index, Silicon dioxide color chart, Silicon dioxide dielectric properties, Silicon dioxide plasma etch
  • Silicon dioxide anisotropic plasma etch, Silicon dioxide BOE etch, Silicon dioxide BHF etch
  • Silicon nitride, SiN, SixNy, Si3N4, Silicon nitride, SiO2, Silicon nitride etch, Silicon nitride film, Silicon nitride growth, Silicon nitride deposition, Silicon nitride reactive sputter deposition, Silicon nitride PECVD deposition, Silicon nitride LPCVD deposition
  • Silicon nitride refractive index, Silicon nitride color chart, Silicon nitride dielectric properties, Silicon nitride plasma etch
  • Silicon nitride anisotropic plasma etch, Silicon nitride H3PO4 etch, Silicon nitride phosphoric acid etch, Silicon nitride HF etch
  • Silicon on sapphire
  • Silicon oxynitride
  • Silver deposition, Silver bump, Silver films, Silver etch, Silver electroplating, Silver sputtering
  • Schottky, Schottky barrier diodes, Schottky barrier junction, Schottky contacts, Schottky defects, Schottky clamp diodes, Schottky cleaning, Schottky films, Hyperabrupt Schottky diodes
  • Schottky clamped process
  • Sheet resistance measurement, base sheet resistance, emitter sheet resistance, epi layer sheet resistance
  • Sn see tin deposition
  • SnO2 see tin oxide deposition
  • SnPb 60-40 see tin-lead deposition
  • Sodium gettering, sodium passivation
  • Solid solubility
  • SOS transistors, SOS process
  • Source - drain contacts, Source - drain layout, Source - drain diffusion, Source - drain implant
  • SPC, see statistic process control
  • Sputter cleaning
  • sputter deposition
  • Sputtering, sputtering yields
  • Sputtered films, sputtered aluminum, sputtered aluminum nitride, sputtered copper, sputtered chrome, sputtered gold, sputtered iron oxide, sputtered molybdenum, sputtered nickel, sputtered nickel - chrome, sputtered nickel - vanadium, sputtered silicon, sputtered silicon nitride, sputtered silver, sputtered tin, sputtered tin oxide, sputtered tin lead, sputtered titanium, sputtered tantalum, sputtered tantalum silicide, sputtered tantalum nitride, sputtered tungsten, sputtered zirconium
  • Stacking fault method, Stacking faults, Stacking fault etch
  • Statistic process control
  • Steam oxidation
  • Step coverage
  • Step junction
  • Step and repeat
  • Stepper
  • Stirring
  • Stress
  • Substrate holder,
  • Sulfur hexafluoride plasma etch
  • Superbeta transistors
  • Surface barriers metal semiconductor, surface charge, surface resistivity
  • Surface concentration, surface inversion, surface mobility, surface reflectivity
  • Susceptor
  • Ta, Tantalum, Tantalum deposition, Tantalum sputtering, Tantalum film, Tantalum etch, Tantalum metallization, Tantalum silicide
  • TaN, Tantalum Nitride deposition, Tantalum Nitride sputtering, Tantalum Nitride film, Tantalum Nitride etch
  • Tantalum Nitride Thin film resistors
  • TaSi2, Tantalum Silicide deposition, Tantalum Silicide sputtering, Tantalum Silicide film, Tantalum Silicide etch
  • Tantalum Silicide thin film resistors
  • Ta TiW Au
  • TaN TiW Au
  • Te, Tellurium deposition, .........
  • Thermo compression bonding
  • Thin film resistors deposition, thin film resistors plasma etch, thin film resistors lift-off process, thin film resistors patterning
  • Thin film resistors stabilization process, thin film resistors annealing process, thin film resistors process
  • Ti, Titanium, titanium deposition, titanium etch, titanium silicide, titanium silicidation
  • TiN, titanium nitride deposition, titanium nitride properties, titanium nitride wet etch, titanium nitride plasma etch
  • TiW, titanium-tungsten deposition, titanium-tungsten properties, titanium-tungsten wet etch, titanium-tungsten plasma etch
  • Ti Ni Ag
  • Ti NiV Ag
  • Ti Pd Au
  • Ti Pt Au
  • TiW Au
  • TiW TiWNx TiW Au
  • TCR, see thermal coefficient of resistance
  • Thermal coefficient of resistance
  • Thermal oxide, thermal oxidation, thermal anneal, thermal processing, thermal treatment
  • Thin film deposition, thin film sputter deposition, thin film sputtering deposition, thin film devices, thin film resistors
  • Thickness measurement
  • Threshold voltage
  • Transistor, bipolar transistor, emitter ballasted transistor, field effect transistor, low reverse gain transistor, MOS transistor, multi-emitter transistor, self-isolated transistor, Superbeta transistor, NPN transistor, PNP transistor, lateral PNP transistor, vertical NPN transistor, vertical PNP transistor, TMOS transistor, Triply diffused transistor
  • Triply diffused process
  • Tube, tube cleaning, diffusion tube cleaning
  • Tungsten, tungsten sputtering deposition, tungsten etch, tungsten silicide, tungsten silicidation
  • Tungsten nitride, WNx, tungsten nitride deposition, tungsten nitride reactive sputtering deposition, tungsten nitride properties, tungsten nitride wet etch, tungsten nitride plasma etch
  • Tunnel reactor
  • Twin tabs, twin diffusion tabs
  • Two-step diffusion
  • Ultrasonic bonding
  • Ultrasonic cleaning
  • Undercut
  • Universal constants
  • UV exposure, UV flood exposure
  • V/I, 4pp measurement of V/I
  • Van der Pauw, Van der Pauw measurement, Van der Pauw structure design
  • Vapor dry in IPA, IPA dry, Isopropyl alcohol vapor dry
  • Vendor, vendor quality system audit
  • VMOS
  • Vertical NPN transistors
  • Vertical PNP transistors
  • Vertical reactor
  • Voltage breakdown, BVcbo, BVceo, BVebo, BVsd, BVgd
  • W, tungsten, W PtSi Si
  • Wafer bumping process, services
  • Wafer cleaning procedures
  • Wafer dicing
  • SILICON VALLEY INCUBATOR, SILICON VALLEY INCUBATOR fabrication, wafer process, wafer processing
  • Wafer foundry
  • Wafer thinning, wafer thinning process, wafer thinning procedure
  • Washout, washout emitter, emitter washout process
  • Water, DI water, deionized water, high resistivity water
  • Wet etch, wet etching, wet anisotropic etch
  • Wet oxide, wet oxidation process
  • Work in progress, WIP
  • Work sheet
  • Working mask
  • X-ray printing
  • Yield, Yield enhancement, Yield specification
  • Zinc, Zn
  • ZnO, zinc oxide
  • Zr, Zirconium
  • Zener diodes
  • Zero bias diode, ZBD